February 1, 2007
Inaugural Letter
Dear Customers and Development Partners,
Thanks very much for your interest in what we do. In recent months, we've been deluged with countless inquiries from customers and development partners keen on our general development updates, technical advances in specific areas, and future product plans and roadmaps. So that we address these inquiries expeditiously, we will publish an informal bi-monthly column on this site. We hope it will address some of your questions as well as inspire new collaborative initiatives.
Today, I write you about a product we expect to announce within the year. In recent months, we have invented an approach to transfer a fully grown GaN epitaxial layer structure (e.g. Layers of FETs and HEMTs) from a Si or SiC substrate, to a free standing diamond substrate. This innovation is particularly exciting because, i) customers will not need to grow device layers on top of a single-layer GaN-on-Diamond template, ii) customers will not have to develop a competency in growing GaN layers on top of diamond, and iii) customers will be able to purchase from us fully formed GaN FET-on-Diamond wafers. Upon announcement of the product, we will disclose details of the transistor’s epitaxial layer structures.
As yet, we are sampling these alpha wafers with a few development partners. Please feel free to write us at technology@Group4Labs.com should you have any ideas for collaboration.
Warm Regards,
Felix Ejeckam
CEO
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