August 1, 2008
4” GaN FET-on-Diamond Epitaxial Wafer
Dear Customers and Development Partners,
In recent months, we began shipping 4” wafers exclusively. We elevated our entire line of GaN FET-on-Diamond wafer product prototypes to 4 Inches. While we continue to oblige 2” or 3” wafer demand from customers and development-partners, we have been emphasizing the availability of 4” wafers.
The photo here shows free-standing 2” and 4” 100-micron thick GaN FET-on-Diamond wafers. The 100-micron thickness here is another key milestone that we recently met. The 2” and 4” wafers here exhibit a free-standing bow of about 80-microns and 500-microns respectively. Aggressive work is underway to reduce these bow numbers dramatically, and final targets are expected to be reached very soon.
Throughput and capacity constraints mean that we have limited ability to meet every demand for samples, but we expect this to improve in the months to come. Please continue to check in with us from time to time.
Warm Regards,
Felix Ejeckam
CEO |
