May 1, 2008
A Silicon Handle Carrier for GaN-on-Diamond Wafer
Dear Customers and Development Partners,
Group4 Labs continues its ramp-up efforts at delivering greater quantities of a recently developed 2” GaN FET-on-Diamond wafer to customers and partners alike. The effort, expected to take about a year, includes meeting all handling and wafer packaging needs of the customer.
In recent months, our staff has developed a Silicon handle carrier wafer for robustly holding GaN FET-on-Diamond wafers which can sometimes be fragile for the new pair of hands. In effect, before we ship the GaN FET-on-Diamond wafer, we mount it on a Si carrier using a special adhesive and process that enables the composite stacked wafers to stay in-tact throughout any high-temperature (up to 1,000 degrees-C) process steps. The carrier also enables “rugged” Si-like handling in the fab.
The photo here shows a 50-micron thick GaN FET-on-Diamond wafer mounted on a conventional Si carrier. The composited wafer-on-carrier has been designed to be resilient up to 1,000 degrees-C.
The company shall remain focused on its on-going year-long scale-up effort to mass produce the GaN FET-on-Diamond wafer products in greater volumes. Additionally, further work shall continue to develop thicker (100-microns thick) and wider-diameter (4”) GaN FET-on-Diamond wafers, along with GaN FET epitaxy re-designed for very high power X-band radar applications.
Warm Regards,
Felix Ejeckam
CEO |
